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NESG210719
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NEC => Renesas Technology
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NESG210719 데이터시트 - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
APPLICATIONS
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
SiGe TRANSISTOR
• 3-PIN SUPER MINIMOLD (19) PACKAGE
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NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
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