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NESG2046M33
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California Eastern Laboratories.
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NESG2046M33 데이터시트 - California Eastern Laboratories.
California Eastern Laboratories.
FEATURES
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
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NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NEC's NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
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