Overview
The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. It is designed to be identical in operation and interface to standard 6T SRAMS.

FEATUREs
• Dual voltage for Optimum Performance:
    VccQ - 2.7 to 3.6 Volts
    Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ)
• Fast random access time
    70ns at 2.7V
• Very fast page mode access time
    25ns page cycle and access
• Very low standby current
    80µA V (Typical)
• Very low operating current
    1.0mA at 1µs (Typical)
• Simple memory control
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• PAR and RMS power saving modes
• Deep sleep option
• TTL compatible three-state output driver