GENERAL DESCRIPTION
   MX25L12836E is 134,217,728 bits serial Flash memory, which is configured as 16,777,216 x 8 internally. When it is in two or 4 x I/O mode, the structure becomes 67,108,864 bits x 2 or 33,554,432 bits x 4. The MX25L12836E features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input.

FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (2 x I/O mode) structure or 33,554,432 x 4 bits (4 x I/O mode) structure
• 4096 Equal Sectors with 4K bytes each
   - Any Sector can be erased individually
• 512 Equal Blocks with 32K bytes each
   - Any Block can be erased individually
• 256 Equal Blocks with 64K bytes each
   - Any Block can be erased individually
• Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE
• High Performance
   VCC = 2.7~3.6V
   - Normal read
      - 50MHz
   - Fast read (Normal Serial Mode)
      - 1 x I/O: 104MHz with 8 dummy cycles
      - 2 x I/O: 70MHz with 8 dummy cycles
      - 4 x I/O: 70MHz with 8 dummy cycles
   - Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
   - Byte program time: 9us (typical)
   - Continuously Program mode (automatically increase address under word program mode)
   - Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 80s(typ.) /chip
• Low Power Consumption
   - Low active read current: 19mA(max.) at 104MHz and 10mA(max.) at 33MHz
   - Low active programming current: 25mA (max.)
   - Low active erase current: 25mA (max.)
   - Low standby current: 100uA (max.)
   - Deep power down current: 40uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention