TMOS IV
Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate

   This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

• Internal Source-to-Drain Diode Designed to Replace 
   External Zener Transient Suppressor - Absorbs High 
   Energy in the Avalanche Mode - Unclamped 
   Inductive Switching (UIS) Energy Capability Specified 
   at 100°C.
• Commutating Safe Operating Area (CSOA) Specified for
   Use in Half and Full Bridge Circuits 
• Source-to-Drain Diode Recovery Time Comparable to a 
   Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits