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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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MTD9N10ET4 데이터시트 - ON Semiconductor

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MTD9N10ET4

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  2005  

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Power MOSFET 9 Amps, 100 Volts N–Channel DPAK

 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

•Avalanche Energy Specified
•Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDS(on)Specified at Elevated Temperature
•Replaces MTD6N10

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