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MTB50P03HDLT4G
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MTB50P03HDLT4G 데이터시트 - ON Semiconductor
ON Semiconductor
Power MOSFET
50 Amps, 30 Volts, Logic Level P−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.
FEATUREs
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSSand VDS(on)Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Pb−Free Packages are Available
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