The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
● Guaranteed performance at 400 MHz, 28 Vdc
Output power = 10 W
Power gain = 12 dB min.
Efficiency = 50% min.
● 100% tested for load mismatch at all phase angles
with 30:1 VSWR
● Gold metallization system for high reliability
● Computer–controlled wirebonding gives consistent
input Impedance
The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
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The RF MOSFET Line 15W, to 400MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 30W, to 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 15W, to 400MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF MOSFET Line 30W, to 400MHz, 28V
M/A-COM Technology Solutions, Inc.