부품명
MRF136Y
Other PDF
no available.
PDF
page
2 Pages
File Size
73 kB
제조사
New Jersey Semiconductor
MRF136Y 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
The RF TMOS Line RF Power Field-EffectTransistors N-Channel Enhancement-Mode TMOS
. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
MRF136 MRF136Y
Output Power = 15 Watts Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical) Efficiency = 54% (Typical)
• Small–Signal and Large–Signal Characterization
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Space Saving Package For Push–Pull Circuit Applications — MRF136Y
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
부품명
상세내역
보기
제조사
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Motorola => Freescale
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR ( Rev : V2 )
New Jersey Semiconductor
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
Motorola => Freescale
TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface
Motorola => Freescale
Share Link: 