MP4020 데이터시트 - Toshiba
제조사

Toshiba
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
• Small package by full molding (SIP 10 pins)
• High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C)
• High collector current: IC (DC) = 2 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Zener diode included between collector and base
MODULE SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR (FOUR DARLINGTON POWER TRANSISTORS IN ONE) ( Rev : 2000 )
Toshiba
Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Toshiba
Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Toshiba
Module Silicon NPN Epitaxial Type Power Transistor (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Toshiba