
ON Semiconductor
SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors.
• 1500 Volt Collector–Emitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Fast Switching: 175 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage: 0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive
• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 Volts (Min)