NPN Silicon Power Transistor
1kV SWITCHMODE Series

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

FEATUREs:
• Collector–Emitter Voltage — VCEV = 1000 Vdc
• Fast Turn–Off Times
   80 ns Inductive Fall Time — 100°C (Typ)
   120 ns Inductive Crossover Time — 100°C (Typ)
   800 ns Inductive Storage Time — 100°C (Typ)
• 100°C Performance Specified for:
   Reverse–Biased SOA with Inductive Load
   Switching Times with Inductive Loads
   Saturation Voltages
   Leakage Currents
• Extended FBSOA Rating Using Ultra–fast Rectifiers
• Extremely High RBSOA Capability

Typical Applications:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits