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MJE703G 데이터시트 - ON Semiconductor

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MJE703G

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These devices are designed for general−purpose amplifier and low−speed switching applications.


FEATUREs
• High DC Current Gain − hFE
   = 2000 (Typ) @ IC
   = 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
   Limit Leakage − Multiplication
• Choice of Packages − MJE700 and MJE800 Series
• Pb−Free Packages are Available*

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