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MJE3439
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ON Semiconductor
NPN Silicon High−Voltage Power Transistor
This device is designed for use in line−operated equipment requiring high fT.
FEATUREs
• High DC Current Gain − hFE = 40−160 @ IC
= 20 mAdc
• Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC
= 10 mAdc
• Low Output Capacitance − Cob = 10 pF (Max) @ f
= 1.0 MHz
• Pb−Free Package is Available*