MJE3055T 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
...designed for usein general-purpose amplifier and switching applications
FEATURES:
* Power Dissipation - PD = 75 W © Tc = 25°C
* DC Current Gain hFE = 20- 100 © lc = 4.0 A
* vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA
SILICON COMPLEMENTARY POWER TRANSISTORS
Central Semiconductor Corp
POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
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New Jersey Semiconductor
Complementary Silicon Power Transistors ( Rev : 2011 )
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Motorola => Freescale
