MJE18006 데이터시트 - New Jersey Semiconductor
제조사

New Jersey Semiconductor
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBO=1000V(Min)
• High Switching Speed
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor