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MJD128T4G
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제조사

ON Semiconductor
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
FEATUREs
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices*