HOME >>> Zibo Seno Electronic Engineering Co.,Ltd >>>
MJ11015 PDF
MJ11015 데이터시트 - Zibo Seno Electronic Engineering Co.,Ltd
제조사

Zibo Seno Electronic Engineering Co.,Ltd
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
• Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
• Complement to the NPN MJ11016
APPLICATIONS
• Designed for use as output devices in complementary
general purpose amplifier applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor