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MJ10023
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New Jersey Semiconductor
MJ10023 데이터시트 - New Jersey Semiconductor
New Jersey Semiconductor
SWITCHMODE Series
NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
The MJ10022 and MJ10023 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn-Off Times
150 ns Inductive Fall Time @ 25°C (Typ)
300 ns Inductive Storage Time @ 25°C (Typ)
• Operating Temperature Range - 65to + 200°C
• 100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
Motorola => Freescale
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
ON Semiconductor
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
Motorola => Freescale
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
New Jersey Semiconductor
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