MJ10020 데이터시트 - ON Semiconductor
제조사

ON Semiconductor
SWITCHMODE™ Series
NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time at 25°C (Typ)
750 ns Inductive Storage Time at 25°C (Typ)
• Operating Temperature Range –65 to +200°C
• 100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
Motorola => Freescale
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
New Jersey Semiconductor
60 AMPERE POWER DARLINGTON TRANSISTORS 200-250 VOLTS 250 WATTS
Mospec Semiconductor
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
Motorola => Freescale
10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS
Motorola => Freescale
16 AMPERES SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS
New Jersey Semiconductor
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
ON Semiconductor
16 AMPERES SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS
Mospec Semiconductor
6 AMPERE POWER DARLINGTON TRANSISTORS 250 VOLTS 30 WATTS
Mospec Semiconductor
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
Motorola => Freescale