부품명
MGFX36V0717
Other PDF
PDF
page
2 Pages
File Size
88.4 kB
제조사
MITSUBISHI ELECTRIC
HOME >>> MITSUBISHI ELECTRIC >>> MGFX36V0717 PDF
MGFX36V0717(1997) 데이터시트 - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
● Internally impedance matched
● High output power P1dB=4.0W (TYP.) @f=10.7 ~ 11.7GHz
● High linear power gain GLP=8.0dB (TYP.) @f=10.7 ~ 11.7GHz
● High power added efficiency ηadd =28% (TYP.) @f=10.7 ~ 11.7GHz
APPLICATION
For use in 10.7 ~ 11.7 GHz band amplifiers
부품명
상세내역
보기
제조사
10.7-11.7GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
Share Link: 