부품명
MGFS45V2325A
Other PDF
PDF
page
1 Pages
File Size
49.1 kB
제조사

MITSUBISHI ELECTRIC
DESCRIPTION
The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=2.3 - 2.5 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.3 - 2.5GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=2.3 - 2.5GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.3 - 2.5 GHz band power amplifier
item 51 : 2.3 - 2.5 GHz band digital radio communication