MGFK25V4045 데이터시트 - MITSUBISHI ELECTRIC
제조사

MITSUBISHI ELECTRIC
DESCRIPTION
The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system
Flip-chip mounted
• High output power
P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz
• High linear power gain
GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz
• High power added efficiency
P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
• 14.0 – 14.5 GHz band power amplifiers
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET ( Rev : 2011 )
MITSUBISHI ELECTRIC
X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
X, Ku-Band Internally Matched FET
Eudyna Devices Inc
X, Ku-Band Internally Matched FET
Eudyna Devices Inc
X,Ku-Band Internally Matched FET
Eudyna Devices Inc
X, Ku-Band Internally Matched FET
Eudyna Devices Inc