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MGFC45V6472A
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MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz
Low distortion [item -51]
IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
Thermal Resistance
Rth(ch-c)=1.0 deg.C/W(MAX.)
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication