부품명
MGFC45V5964A_04
Other PDF
no available.
PDF
page
3 Pages
File Size
221.4 kB
제조사
MITSUBISHI ELECTRIC
HOME >>> MITSUBISHI ELECTRIC >>> MGFC45V5964A_04 PDF
MGFC45V5964A_04 데이터시트 - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band power amplifier
부품명
상세내역
보기
제조사
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
5.9 ~ 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
Share Link: 