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MGFC45V5964A
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MGFC45V5964A(1998) 데이터시트 - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
High power gain
GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.
APPLICATION
5.9 - 6.4 GHz band amplifiers
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