L & S BAND / 0.25W SMD non - matched

DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
• High output power
   Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
• High power gain
   Gp=21dB(TYP.) @f=1.9GHz
• High power added efficiency
 add=38%(TYP.) @f=1.9GHz,Pin=4dBm
• Hermetic Package

APPLICATION
• For UHF Band power amplifiers