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MBT3906DW1T1G 데이터시트 - ON Semiconductor

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MBT3906DW1T1G

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  2005   2009  

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ON-Semiconductor
ON Semiconductor 

Dual General Purpose Transistor

The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.


FEATUREs
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements; AEC−Q101 Qualified and
   PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant*


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