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MBR6045WT
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제조사

ON Semiconductor
SWITCHMODE™ Power Rectifier
The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal.
FEATUREs
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
• 45 V Blocking Voltage
• Low Forward Voltage Drop
• Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)
• 175°C Operating Junction Temperature
• Pb−Free Package is Available*