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MBR3045WTG
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MBR3045WTG(2014) 데이터시트 - ON Semiconductor
ON Semiconductor
Switch Mode Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.
FEATUREs
• Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Popular TO−247 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
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