DESCRIPTION
The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format.
MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption.
* : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan

FEATURES
• 1 M word × 64 bit × 4 banks organization
• DDR Burst Read/Write Access Capability
   -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C)
   -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
• Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V
• Junction Temperature: TJ = − 10 °C to + 125 °C
• 1.8 V-CMOS compatible inputs
• Burst Length: 2, 4, 8, 16
• CAS latency: 2, 3, 4
• Clock Stop capability during idle periods
• Auto Precharge option for each burst access
• Configurable Driver Strength and Pre Driver Strength
• Auto Refresh and Self Refresh Modes
• Deep Power Down Mode
• Low Power Consumption
   -IDD4R =300 mA Max @ 3.46 GByte/s
   -IDD4W =330 mA Max @ 3.46 GByte/s
• 4 K refresh cycles / 4 ms (Tj ≤ +125 °C)