Description
M/A-COM’s MAAP-007649-000100 2 watt power amplifier utilizes GaAs HBT technology with a +20 Volt BVceo process for improved linearity performance, power efficiency, and high reliability, in a low cost 4 mm PQFN surface mount plastic package.
The MAAP-007649-000100 incorporates an on-chip active bias network for ease of implementation, and maintains high linearity over temperature. The device operates from a single +7.5 volt supply and has a +4.5 volt reference pin for power down control capability.
The MAAP-007649-000100 has been optimized as a power amplifier for RFID Reader applications, but can also be used for infrastructure and industrial applications, since it provides consistent performance over the entire 800 to 1000 MHz band.

FEATUREs
• HIGH Gain: 19 dB (TYP.)
• HIGH P1dB: +34.0 dBm (TYP.)
• HIGH OIP3: +49.5 dBm (TYP.)
• 50% PAE @ P1dB
• Optimized Performance for RFID Bands
• >1 watt Dense Reader Mode Spectral Mask Compliance
• On-Chip Active Bias Network
• Lead Free 4 mm PQFN Surface Mount Package
• 260°C Reflow Capability

APPLICATIONs
• RFID Readers
• Cellular Infrastructure
• AMPS, ISM Applications
• Multi-Carrier Applications