
MITSUBISHI ELECTRIC
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application.
FEATURES
Package
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
M5M51008BFP ············ 32pin 525mil SOP
M5M51008BVP,RV············ 32pin 8 X 20 mm2 TSOP
M5M51008BKV,KR ············ 32pin 8 X 13.4 mm2 TSOP
APPLICATION
Small capacity memory units