
[Elite Semiconductor Memory Technology Inc.
GENERAL DESCRIPTION
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
● JEDEC standard 3.3V power supply
● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock
● DQM for masking
● Auto & self refresh
● 15.6 µ s refresh interval