GaAs Infrared Light Emitting Diode

For optical control systems

FEATUREs
● High-power output, high-efficiency : PO = 6 mW (typ.)
● Wide directivity, matched for external optical systems : θ = 100 deg.
● Infrared light emission close to monochromatic light : λP = 950 nm
● Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors