Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
   protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices, steering,
   biasing and coupling diodes for fast switching
   and low logic level applications.
• This diode is also available in the DO-35 case
   with type designation 1N5711 and 1N6263.