INTRODUCTION
Sharp’s LH28F004SU-LC 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities. 3.3 V low power operation and very high read/write performance, the LH28F004SU-LC is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• 512K × 8 Word Configuration
• 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC)
    – No Requirement for DC/DC Converter to Write/Erase
• 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
• Min. 2.7 V Read Capability
    – 160 ns Maximum Access Time (VCC = 2.7 V)
• 32 Independently Lockable Blocks
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Inferface
    – Status Register
    – RY»/BY» Status Output
• System Performance Enhancement
    – Erase Suspend for Read
    – Two-Byte Write
    – Full Chip Erase
• Data Protection
    – Hardware Erase/Write Lockout during Power Transitions
    – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 4 µA (Typ.) ICC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• Extended Temperature Operation Available
    – -40°C to +85°C
• 40-Pin, 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package