KSD363 데이터시트 - Inchange Semiconductor
제조사
Inchange Semiconductor
DESCRIPTION
• Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min)
• Collector Current- IC= 6A
• Collector Power Dissipation- : PC= 40W@ TC= 25℃
APPLICATIONS
• Designed for B/W TV horizontal deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
