K1062 데이터시트 - Toshiba
제조사
Toshiba
High Speed Switching Applications
Analog Switching Applications
Interface Applications
• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA
• Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA
• Enhancement-mode
• Complementary to 2SJ168
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
