VDSS = 1000V
ID25 = 12A
RDS(on) ≤ 1.05Ω
trr ≤ 250ns

N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr

FEATUREs
• RF capable MOSFETs
• Double metal process for low gate resistance
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic rectifier

APPLICATIONs
• DC-DC converters
• Switched-mode and resonant-mode power supplies, >500kHz switching
• DC choppers
• 13.5 MHz industrial applications
• Pulse generation
• Laser drivers
• RF amplifiers

Advantages
• Space savings
• High power density