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IXFN102N30P
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제조사

IXYS CORPORATION
PolarHV™ HiPerFET Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
FEATUREs
• International standard package
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density