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IS61LV25616-10BI 데이터시트 - Integrated Silicon Solution

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IS61LV25616-10BI

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ISSI
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DESCRIPTION
The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.


FEATURES
• High-speed access time:
  — 10, 12, and 15 ns
• CMOS low power operation
• Low stand-by power:
  — Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available

 

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1M x 16  HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ( Rev : 2012 )
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