-200 Volt, 0.315Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retainidenticalelectrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

FEATUREs:
◾ Radiation Hardened up to 1 x 105 Rads (Si)
◾ Single Event Burnout (SEB) Hardened
◾ Single Event Gate Rupture (SEGR) Hardened
◾ Gamma Dot (Flash X-Ray) Hardened
◾ Neutron Tolerant
◾ Identical Pre- and Post-Electrical Test Conditions
◾ Repetitive Avalanche Rating
◾ Dynamic dv/dt Rating
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Hermetically Sealed
◾ Electrically Isolated
◾ Ceramic Eyelets