The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits
The IRFP-types are supplied in the JEDEC TO-247 plastic package.

FEATUREs:
• Single pulse avalanche energy rated
• SOA ispower-dissipation /imited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance