IRFM260(1996) 데이터시트 - International Rectifier
제조사

International Rectifier
200Volt, 0.060Ω, HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.
FEATUREs:
◾ Hermetically Sealed
◾ Electrically Isolated
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Ceramic Eyelet
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR ( Rev : 1998 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTOR
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : V2 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR ( Rev : 1996 )
International Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR
International Rectifier