IRFI740 데이터시트 - International Rectifier
제조사

International Rectifier
Description
Third Gneration HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
• Isolated Package
• High Voltage Isolation = 2.5 KVRMS
• Sink to Lead Creepage Dist.=4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
International Rectifier
HEXFET® Power MOSFET VDSS = 400V RDS(ON)=0.55 Ω ID=5.7A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
HEXFET® Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET VDSS= 55V RDS(on)= 0.016Ω ID= 36A
International Rectifier
HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
International Rectifier