DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY TM process. This technology matches and improves the performances compared with standard parts from varous sources.

● Typical RDS(on)=1.35 Ω
● EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
● VERYLOW INTRINSIC CAPACITANCES
● GATE CHARGE MINIMIZED

APPLICATIONS
● High current, high speed switching
● Swith mode power supplies (SMPS)
● DC-AC converters for welding equipment and uninterrup
   tible power supplies and motot driver