IRF640PBF 데이터시트 - VBsemi Electronics Co.,Ltd
제조사
VBsemi Electronics Co.,Ltd
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
Unspecified
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
