IRF640N(V2) 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
• Drain Current –ID= 18A@ TC=25℃
• Drain Source Voltage-
: VDSS= 200V(Min)
• Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω (Max)
• Fast Switching Speed
• Low Drive Requirement
APPLICATIONS
• Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor