IRF1404L 데이터시트 - International Rectifier
제조사
International Rectifier
Description
Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
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Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 202A)
International Rectifier
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 162A)
International Rectifier
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
Kersemi Electronic Co., Ltd.
Power MOSFET(VDSS= 40V RDS(on)= 0.004Ω ID= 162A)
Kersemi Electronic Co., Ltd.
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
International Rectifier
